AGC ELECTRONICS TAIWAN INC

Silicon carbide (product name: ROICERAM™-HS) has characteristics of high purity, high strength, low thermal expansion and excellent acid resistance and heat resistance. We have over 30 years of experience as a supplier of parts for semiconductor manufacturing furnaces mainly in high temperature process. Our technologies accumulated in the semiconductor market have led to applications in LED, solar cell, SiC power device in recent years.

Features
Applications
Technical

high purity, high strength, low thermal expansion and excellent acid resistance and heat resistance.

Material for semiconductor production equipment (Si, SiC power device, high temperature oxidation/diffusion furnace, and LPCVD furnace)
Material for LED manufacturing device (MOCVD furnace)
Material for solar cell production equipment (High temperature diffusion furnace)
Structure material for precision optical device
Aerospace industries, etc.

Physical property data of ROICERAM™-HS

Property	Unit	U grade
Bulk density	kg/㎥	3.0×10³
Flexural strength	MPa	230
Young's Modulus	GPa	366
Coefficient of thermal expansion	10^-6/℃	4.4
Thermal conductivity	W/(m・K)	180
Specific heat	J/(kg・K)	0.7×10³
Volume resistivity (20℃)	Ω・cm	1×10^-1

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